ssf 1006 ? silikron semiconductor co.,ltd. 20 11 . 0 5 . 25 version : 2.3 page 1 of 8 www.silikron.com main product characteristics: features and benefits : description : absolute max rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 200 a i d @ tc = 100c continuous drain current, v gs @ 10v 130 i dm pulsed drain current 800 p d @tc = 25c power dissipation 326 w linear derating factor 2.2 w/c v ds drain - source voltage 100 v v gs gate - to - source voltage 2 0 v e as single pulse avalanche energy @ l=0.3mh 614 mj i a s avalanche current @ l=0.3 mh 64 a t j t stg operating junction and storage temperature range - 55 to + 175 c v dss 100 v r ds (on) 4.6 m (typ . ) i d 200 a to220 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 17 5 operating temperature it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications .
ssf 1006 ? silikron semiconductor co.,ltd . 20 11 . 05 . 25 version : 2.3 page 2 of 8 www.silikron.com thermal resistance symbol characterizes typ. max. units r jc junction - to - case 0.46 /w r j a junction - to - ambient ( t 10s ) 62 /w junction - to - ambient (pcb mounted, steady - state) 40 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 100 v v gs = 0v, i d = 250a r ds(on) static drain - to - source on - resistance 4.6 6 m v gs =10v , i d = 30 a 9.23 t j = 1 25 v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250a 2.22 t j = 1 25 i dss drain - to - source leakage current 1 a v ds = 100 v,v gs = 0v 50 t j = 125 c i gss gate - to - source forward leakage 1 00 na v gs = 20 v - 1 00 v gs = - 20 v q g total gate charge 242 nc i d = 30 a , v ds = 30 v , v gs = 10v q gs gate - to - source charge 48 q gd gate - to - drain("miller") charge 79 t d(on) turn - on delay time 30 n s v gs =10v, v ds = 30 v, r l = 15 , r gen = 2.5 i d = 30 a t r rise time 24 t d(off) turn - off delay time 115 t f fall time 43 c iss input capacitance 9807 pf v gs = 0v v ds = 25 v ? = 500k hz c oss output capacitance 672 c rss reverse transfer capacitance 583 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 200 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 800 a v sd diode forward voltage 0.88 1 .3 v i s = 60 a, v gs =0v t rr reverse recovery time 46 ns t j = 25c , i f = 75 a, di/dt = 10 0a/s q rr reverse recovery charge 88 nc
ssf 1006 ? silikron semiconductor co.,ltd . 20 11 . 05 . 25 version : 2.3 page 3 of 8 www.silikron.com test circuits and waveforms switch waveforms: n otes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a . repetitive rat ing; pulse width limited by max junction temperature. the power dissipation pd is based on max junction temperature , using junc tion - to - case thermal resistance . the val ue of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 1006 ? silikron semiconductor co.,ltd . 20 11 . 05 . 25 version : 2.3 page 4 of 8 www.silikron.com t ypical electrical and thermal characteristics fig ure 2. g ate to source cut - off voltage figure 1: typical output characteristics fig ure 3. drain - to - source breakdown voltage vs. temperature figure 4: normalized on - resistance vs. case temperature
ssf 1006 ? silikron semiconductor co.,ltd . 20 11 . 05 . 25 version : 2.3 page 5 of 8 www.silikron.com fig ure 5 . maximum drain current vs. case temperature case temperature t ypical electrical and thermal characteristics fig ure 6 .typical capacitance vs. drain - to - source voltage fig ure 7 . maximum effective transient thermal impedance, junction - to - case
ssf 1006 ? silikron semiconductor co.,ltd . 20 11 . 05 . 25 version : 2.3 page 6 of 8 www.silikron.com mechanical data min nom max min nom max a 4.400 4.550 4.700 0.173 0.179 0.185 a1 1.270 1.300 1.330 0.050 0.051 0.052 a2 2.240 2.340 2.440 0.088 0.092 0.096 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 b2 0.750 0.800 0.850 0.030 0.031 0.033 c 0.480 0.500 0.520 0.019 0.020 0.021 d 15.100 15.400 15.700 0.594 0.606 0.618 d1 8.800 8.900 9.000 0.346 0.350 0.354 d2 2.730 2.800 2.870 0.107 0.110 0.113 e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 8.700 - - 0.343 - p 3.570 3.600 3.630 0.141 0.142 0.143 p1 1.400 1.500 1.600 0.055 0.059 0.063 e e1 l 13.150 13.360 13.570 0.518 0.526 0.534 l1 l2 2.900 3.000 3.100 0.114 0.118 0.122 l3 1.650 1.750 1.850 0.065 0.069 0.073 l4 0.900 1.000 1.100 0.035 0.039 0.043 q1 5 0 7 0 9 0 5 0 7 0 9 0 q2 5 0 7 0 9 0 5 0 7 0 9 0 q3 5 0 7 0 9 0 5 0 7 0 9 0 q4 1 0 3 0 5 0 1 0 3 0 5 0 0.2bsc 7.35ref 0.29ref symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc 5.08bsc to220 package outline dimension_gn
ssf 1006 ? silikron semiconductor co.,ltd . 20 11 . 05 . 25 version : 2.3 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 1006 package (available) to 220 operating temperature range c : - 55 to 175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to 220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 1006 ? silikron semiconductor co.,ltd . 20 11 . 05 . 25 version : 2.3 page 8 of 8 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before usi ng any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms an d states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause da mage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant desig n, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and rec ording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guarant eed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all inform ation described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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